India’s first Gallium Nitride (GaN)-based semiconductor fabrication unit

Chhattisgarh Chief Minister Vishnu Deo Sai laid the foundation stone for India’s first Gallium Nitride (GaN)-based semiconductor fabrication unit in New Raipur.

  • The plant, which aims to manufacture 10 billion chips annually by 2030, is set to commence commercial production in April-May 2026.

About Gallium Nitride (GaN)

  • Gallium nitride crystals can be grown on a variety of substrates, including sapphire, silicon carbide (SiC), and silicon (Si).
  • Gallium Nitride is globally recognised as a superior alternative to silicon in high-power, high-frequency applications, due to its efficiency, thermal performance, and durability.
  • GaN chips are faster, more energy-efficient, and highly durable, making them the ideal choice for next-gen technologies.

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